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发明名称
使用浸没式蚀印法制造半导体元件的方法
摘要
揭示的是使用浸没式蚀印法制造半导体元件的方法,其包括在曝光步骤之后和曝光后的烘烤步骤之前,以至少大约40℃的水预先处理晶圆,藉以有效地减少水痕缺陷。
申请公布号
TW200735176
申请公布日期
2007.09.16
申请号
TW095131543
申请日期
2006.08.28
申请人
海力士半导体股份有限公司
发明人
郑载昌;文承灿
分类号
H01L21/027(2006.01)
主分类号
H01L21/027(2006.01)
代理机构
代理人
桂齐恒;阎启泰
主权项
地址
韩国
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