Methods for making a nonvolatile memory device comprising a shunt silicon layer

摘要

A nitride read only memory comprises a selectively grown, epitaxial, shunt silicon layer (shunt layer) that reduces the bit line sheet resistance and increases bit line mobility. The shunt layer can be grown by a in situ, P-doped deposit at high temperature. A bit line interface without native oxide and excellent electron mobility can be achieved using the methods for selective epitaxial growth described herein.