| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus and a defect correcting method less affected by contamination by gas diffusion. <P>SOLUTION: A gas mechanism MG2 for supplying a gas to the surface of a substrate is provided in proximity to the substrate and a charged particle beam source for generating a charged particle beam and applying it to the surface of the substrate. The gas mechanism MG2 has an opening EO that permits passage of the charged particle beam, a gas outlet BO2 for locally injecting the gas to the vicinity of an irradiation point on the substrate to which the charged particle beam is to be applied, and a gas inlet SO2 for sucking and exhausting the injected gas in the vicinity of the irradiation point. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
