发明名称 Gold-bumped interposer for vertically integrated semiconductor system
摘要 A semiconductor system ( 100 ) enabled by an interposer ( 101 ) with non-reflow metal studs ( 251 ), preferably gold, coated with reflow metals ( 252 ), preferably solder. The studs are on exit ports ( 220, 230, etc) of the interposer surface; selected exit ports may be spaced apart by less than 125 mum center to center. A first electrical device ( 102 ), such as one or more semiconductor chips with contact pads matching the locations of the interposer exit ports, contacts the studs on one interposer surface. A second electrical device ( 104 ), such as a semiconductor chip, a passive component, or both, is attached to the other interposer surface. A carrier ( 106 ) supports the first device and provides electrical connections ( 109 ) to external parts.
申请公布号 US2007210426(A1) 申请公布日期 2007.09.13
申请号 US20060370265 申请日期 2006.03.07
申请人 发明人 GERBER MARK A.;HUDDLESTON WYATT A.
分类号 H01L23/02 主分类号 H01L23/02
代理机构 代理人
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