发明名称 WAFER MACHINING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a wafer machining method capable of supplying a wafer diced by a laser dicing apparatus to a later process without cutting. <P>SOLUTION: The wafer machining method comprises: a first mechanical machining step for grinding the back of the wafer W, polishing the back of the wafer after grinding, and machining the back of the wafer to a thickness T2 that is thicker than a final machining thickness T1 of the wafer; a modified region formation step for forming a modified region inside the wafer by applying laser beams to the inside of a 0.1-10 mm non-modified zone Z from the outer periphery of the wafer after the first mechanical machining; and a second mechanical machining step for grinding the back of the wafer after forming the modified region, polishing the back of the wafer after grinding, and machining the back of the wafer to the final machining thickness T1 of the wafer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007235069(A) 申请公布日期 2007.09.13
申请号 JP20060058331 申请日期 2006.03.03
申请人 TOKYO SEIMITSU CO LTD 发明人 KANEKO TAKAYUKI
分类号 H01L21/301;B23K26/38;B23K26/40;B23K101/42;H01L21/304 主分类号 H01L21/301
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