发明名称 INTEGRATED CIRCUIT SYSTEM WITH DOUBLE DOPED DRAIN TRANSISTOR
摘要 An integrated circuit system includes a substrate, forming a gate over the substrate, forming a first drift region having a first counter diffused region and a source diffused region, the first drift region in the substrate adjacent a first side of the gate, and forming a second drift region having a second counter diffused region and a drain diffused region, the second drift region in the substrate adjacent a second side of the gate opposite the first side of the gate.
申请公布号 US2007210376(A1) 申请公布日期 2007.09.13
申请号 US20070683655 申请日期 2007.03.08
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 LI YISUO;CHEN GANG;BENISTANT FRANCIS;VERMA PURAKH RAJ;YANG HONG;CHU SHAO-FU SANFORD
分类号 H01L29/76 主分类号 H01L29/76
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