发明名称 |
LASER SURFACE ANNEALING OF ANTIMONY DOPED AMORPHIZED SEMICONDUCTOR REGION |
摘要 |
A sheet resistance stabilized recrystallized antimony doped region may be formed within a semiconductor substrate by annealing a corresponding antimony doped amorphized region at a temperature from about 1050° C. to about 1400° C. for a time period from about 0.1 to about 10 milliseconds. Preferably, a laser surface treatment is used. The laser surface treatment preferably uses a solid phase epitaxy. In addition, the antimony doped region may be co-doped with at least one of a phosphorus dopant and an arsenic dopant. The antimony dopant and the laser surface treatment lend sheet resistance stability that is otherwise absent when forming solely phosphorus and/or arsenic doped regions.
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申请公布号 |
US2007212861(A1) |
申请公布日期 |
2007.09.13 |
申请号 |
US20060308108 |
申请日期 |
2006.03.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;JAIN SAMEER H.;HENSON WILLIAM K.;RIM KERN |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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