| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method of a semiconductor, a semiconductor device and its manufacturing method for reducing leak currents close of the surface of a semiconductor layer containing Ga and N. SOLUTION: This method for processing a semiconductor compries a process for forming a first insulating film (24) containing silicon on the surface of a GaN system semiconductor layer (20) and a process for removing the first insulating film (24) formed on the surface of the GaN system semiconductor layer (20), and a semiconductor device and its manufacturing method are provided with this method for processing a semiconductor. Thus, it is possible to make the composition ratio of Ga and N on the surface of the GaN system semiconductor layer close to a stoichiometric composition ratio. COPYRIGHT: (C)2007,JPO&INPIT
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