| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a thin film, which can keep uniformity of the film thickness by suppressing the influence of ambient temperature, history in film deposition, or the like to the minimum. SOLUTION: The production conditions, such as pressure in a chamber 1, the flow rate of Cl<SB>2</SB>gas 17, the RF power or the like, are appropriately changed based on the light emission distribution state of Cu atoms and CuCl molecules by a laser light in order to obtain a light emission state at which the Cu atoms and CuCl molecules become uniform at an upper part of a substrate 3. Thereby, the densities of Cu atoms and CuCl molecules are each made uniform every substrate 3, and the uniformity of the film thickness is secured. COPYRIGHT: (C)2007,JPO&INPIT
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