| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for treating hydrophilization of silicon wafer and a hydrophilizing agent capable of further reducing the attachment of particles and metals by hydrophilizing a wafer surface after mirror plane polishing without scratching the surface. SOLUTION: The method for treating hydrophilization of a silicon wafer mirror plane that hydrophilizes the surface by rotating the silicon wafer on which rinsing treatment is performed after the mirror plane polishing while pressing a polishing cloth thereagainst with a very light weighting under contacting a hydrophilizing process liquid, wherein the hydrophilizing process liquid is constituted by at least containing an organic compound with molecular weight of 100 or more having at least one hydrophilic group, a basic nitrogen contained organic compound, and a surfactant, and is constituted by an aqueous solution whose PH is 9.5 to 10.5. COPYRIGHT: (C)2007,JPO&INPIT |
