METHODS OF DEPOSITING RUTHENIUM FILM AND MEMORY MEDIUM READABLE BY COMPUTER

摘要

A substrate is placed in a processing vessel and heated. Into the processing vessel are introduced a ruthenium pentadienyl compound gas, e.g., 2,4-dimethylpentadienylethylcyclo-pentadienylruthenium, and oxygen gas. These gases are reacted on the heated substrate to deposit a ruthenium film on the substrate. Alternatively, a substrate is placed in a processing vessel and heated. A ruthenium compound gas and a decompositing gas capable of decomposing this compound are introduced so that the flow rate of at least either of these changes periodically to form alternating steps which differ in gas composition. These gases are reacted on the heated substrate without purging the processing vessel between those steps to thereby deposit a ruthenium film on the substrate.