发明名称 MULTILAYER INTERCONNECTION BOARD, AND SEMICONDUCTOR DEVICE USING SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To achieve a high density interconnection in sequentially stacked thin film layers of an insulating film and copper formed outside in a multilayer interconnection board where plated through-holes are formed, and to produce a multilayer interconnection board inexpensively, which has excellent heat dissipating property and high frequency property. <P>SOLUTION: Vias for connecting with an outside interconnection layer are formed in a partially extended area of lands where the plated through-holes in a double-sided printed board are filled; and sequentially stacked thin film layers are formed thereon. Columnar copper bodies are formed on the through-holes, and connected with other semiconductors using a conductor having high heat conductivity. Furthermore, the interconnection area of the substrate is shielded with an insulator and a ground layer. In these production methods, filler-containing solvent-free fluid polymer precursor is heated and molten, and then supplied on the substrate using a precise constant-volume dispenser. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007235176(A) 申请公布日期 2007.09.13
申请号 JP20070147617 申请日期 2007.06.04
申请人 HITACHI LTD 发明人 SUGIYAMA HISASHI;KITAMURA NAOYA;YAMAGUCHI YOSHIHIDE;YOSHIZAWA CHIE;KYOI MASAYUKI;YAMAMURA HIDEO;MATSUMOTO KUNIO
分类号 H01L23/12;H05K3/46 主分类号 H01L23/12
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