JUNCTION DIODE, AND METHOD FOR MANUFACTURING JUNCTION DIODE

摘要

PROBLEM TO BE SOLVED: To provide a junction diode using a gallium nitride-based semiconductor and capable of improving a withstand voltage. SOLUTION: The junction diode 11 comprises an n-type gallium nitride-based semiconductor layer 13, and a p-type gallium nitride-based semiconductor layer 15. The layer 13 has a carrier concentration of not more than 1×1017cm-3. The layer 15 is provided on the layer 13, and has a magnesium concentration of less than 1×1019cm-3. The layer 13 and the layer 15 compose a homo junction 17. The layer 13 is provided over a substrate 19. COPYRIGHT: (C)2007,JPO&INPIT