| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device having nanocrystals, and to provide its manufacturing method. SOLUTION: The memory device comprises: a substrate; a source region and a drain region formed inside the substrate and located separately from each other; a memory cell formed on the substrate surface, connecting the source region and the drain region and having a plurality of nanocrystals, and a control gate formed on the memory cell, wherein the memory cell is equipped with a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer and having the plurality of nanocrystals. Thereby and by providing the second tunneling oxide layer having hydrophilicity which can incorporate an aminosilane group to impart an electrostatic attractive force, a monolayer arrangement of the nanocrystals becomes possible, control of device characteristics becomes possible, and the memory device exhibiting more improved device characteristics can be provided. COPYRIGHT: (C)2007,JPO&INPIT |
