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发明名称
HIGH SPEED SILICON ETCHING METHOD
摘要
申请公布号
EP1329948(A4)
申请公布日期
2007.09.12
申请号
EP20010967676
申请日期
2001.09.13
申请人
TOKYO ELECTRON LIMITED;KABUSHIKI KAISHA TOSHIBA
发明人
MIMURA, TAKANORI;NAGASEKI, KAZUYA;SAKAI, ITSUKO;OHIWA, TOKUHISA
分类号
H01L21/302;H01L21/3065;H01J37/32;H01L21/308;H01L21/3213
主分类号
H01L21/302
代理机构
代理人
主权项
地址
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