CLEANING LIQUID FOR LITHOGRAPHY AND METHOD FOR RESIST PATTERN FORMATION

摘要

This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula
wherein R 1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R 2 and R 3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.