| 摘要 |
1,106,787. Transistors. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 15 April, 1965 [21 April, 1964], No. 16248/65. Heading H1K. A transistor comprises a semi-conductor wafer with an elongated base region 2 at one surface (Fig. 1), an emitter region within it comprising a main part near one end of the base region and an extension 4 to one side of the base region, and a base contact 9 between the extension and the other side of the base region. The regions and contacts may have rounded corners if desired. Although the base and emitter regions may be produced by epitaxial deposition it is preferred to form them by diffusion through oxide masking prepared by photolithographic techniques. The main wafer is N-type silicon and the diffusants boron and phosphorus respectively. The contacts, formed by evaporation, may be extended at 11, 12 over the oxide to the edges of the wafer. A plurality of the transistors may be formed simultaneously in a wafer from which they are subsequently subdivided or left to form part of a solid circuit. |
