MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to enhance reliability of electrical connection between a connective plug and a conductive layer deposited within an opening formed in a second insulating layer on the connective plug. A conductive connection plug(300) is formed on a first insulating layer which is formed on a base layer. A surface of the conductive connection plug is exposed from the first insulating layer, penetrates the first insulating layer, and is electrically connected to the base layer. A second insulating layer is formed on the surface of the conductive connection plug and the first insulating layer. An opening(410) is formed in the second insulating layer in order to expose the conductive connection plug and the first insulating layer. A conductive layer is deposited on the second insulating layer and in the opening. A wiring layer connected electrically with the conductive connection plug is formed on the second insulating layer by patterning the conductive layer. A conductive connection plug region(300') as the surface of the conductive connection plug has a long shape including a first longitudinal direction and a first width direction. An opening region(410') exposed by the opening has a long shape including a second longitudinal direction and a second width direction. In an etching process, the opening is positioned such that the first longitudinal direction and the second longitudinal direction are intersected with each other in order to form a predetermined angle.