SEMICONDUCTOR DEVICE AND OPERATION CONTROL METHOD FOR SAME

摘要

A semiconductor device includes: a semiconductor substrate; word lines; global bit lines; inversion gates that form inversion layers serving as local bit lines in the semiconductor substrate, the inversion layers being electrically connected to the global bit lines; and a memory cell using the inversion layers as a source and a drain. With this structure, it is possible to operate the inversion gates like sector transistors and it is not needed to provide sector transistors. This reduces the area for the sector transistors and suppresses enlargement of the circuit area. In erasing, the electrons injected in the memory cell may be drawn to the substrate side by utilizing the FN tunneling effect. It is also possible to draw the electrons injected in the memory cell to the word line side by utilizing the FN tunneling effect. In erasing, it is also possible to draw the electrons injected in the memory cell from the inversion gates by utilizing the FN tunneling effect.