| 摘要 |
The invention relates to semiconductor devices and methods for production thereof, whereby the semiconductor devices are embodied as Trench-Schottky-Barrier-Schottky diodes with PN diodes as contact element (TSBS-PN) and exhibit additional properties in comparison with conventional TSBS elements, which permit a matching of the electrical properties. The TSBS-PN diodes are produced using particular production techniques and are embodied with physical properties such as to be suitable for application in a rectifier for a motor vehicle generator and may also be operated as Z diodes.
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