LIGHT EMITTING DIODE HAVING IN-RICH INGAN/GAN SUPERLATTICE AND THE FABRICATION METHOD THEREOF

摘要

A light emitting diode having In-rich InGaN/GaN super lattice and its fabricating method are provided to improve a luminous efficiency of the diode by dispersing current flowing through the diode, thereby extending a life span of the diode. A bottom GaN layer(55) is positioned on a substrate(51), and an n-type GaN semiconductor layer is positioned on the bottom GaN layer. A p-type GaN semiconductor layer(61) is positioned on the n-type semiconductor layer, and an active layer(59) is interposed between the n-type semiconductor layer and the p-type semiconductor layer. A InGaN/GaN superlattice layer is interposed between the n-type semiconductor layer and the bottom GaN layer.