| 摘要 |
One aspect of the present subject matter relates to a partially depleted silicon-on-insulator structure. The structure includes a well region formed above an oxide insulation layer. In various embodiments, the well region is a multilayer epitaxy that includes a silicon germanium (Si-Ge) layer. In various embodiments, the well region includes a number of recombination centers between the Si-Ge layer and the insulation layer. A source region, a drain region, a gate oxide layer, and a gate are formed. In various embodiments, the Si-Ge layer includes a number of recombination centers in the source/drain regions. In various embodiments, a metal silicide layer and a lateral metal Schottky layer are formed above the well region to contact the source region and the well region. Other aspects are provided herein.
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