METHOD OF FORMING A MASK PATTERN FOR FABRICATING A SEMICOUCTOR DEVICE

摘要

A method for forming a mask pattern for manufacturing a semiconductor is provided to form a minute feature approximate to a layout by using an organic mask layer and an inorganic mask layer to perform a double exposure. A first region and a second region whose parts are overlapped each other are defined on a semiconductor substrate(10). The overlapped region of the first and second regions is defined as a third region of the semiconductor substrate. An organic mask layer(14) and an inorganic mask layer(16) are layered on the semiconductor substrate. The inorganic mask layer in the first region is etched in a predetermined thickness. The inorganic mask layer in a second region is etched in a predetermined thickness to expose the organic mask layer in the third region. The organic mask layer exposed in the third region is removed. The inorganic mask layer is a formed by layering a first inorganic mask layer and a second inorganic mask layer.