| 摘要 |
<p num="1"><br/><br/><br/>This invention relates to a photovoltaic device including a front contact <br/>and/or a method of making the same. In certain example embodiments, the <br/>transparent conductive oxide (TCO) front contact is of indium zinc oxide <br/>(IZO). In other example embodiments, the IZO may have other element(s) such as <br/>silver (Ag) added thereto so that the front contact may be of or include zinc <br/>aluminum silver oxide (ZnAlAgO) for example. Moreover, in certain example <br/>embodiments the front contact (e.g., IZO or ZnAlAgO) maybe sputter-deposited <br/>in an oxygen deficient form (substoichiometric); so that subsequent heat <br/>treatment or baking used in the photovoltaic device manufacturing (e.g., for <br/>subsequent layer formation) results in an optimal stoichiometry which may or <br/>may not be substoichiometric in the final product.<br/>
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