发明名称 METHOD FOR ELECTROCHEMICALLY STRUCTURING A CONDUCTUVE OR SEMICONDUCTOR MATERIAL, AND DEVICE FOR IMPLEMENTING IT
摘要 <p>The invention provides a method and a device for reliable, rapid, simple, easily implementable and reproducible electrochemical microstructuring and/or nanostructuring. For this purpose, the subject of the invention is a method for electrochemically structuring a specimen (12) made of a conductive or semiconductor material and comprising two opposed faces, a front face (11) and a rear face (13). The method comprises the steps consisting: in bringing at least the front face (11) of the specimen (12) into contact with at least one electrolytic solution (4) stored in at least one reservoir (3); in placing at least one counterelectrode (6) in the electrolyte (4) opposite the front face (11) of the specimen (12) that has to be structured; in placing at least one working electrode (7) in dry ohmic contact with the rear face (13) of the specimen (12), said working electrode having structuring features (14); and in applying an electric current between the two electrodes in order to obtain an electrochemical reaction at the interface between the front face (11) of the specimen (12) and the electrolyte (4), with a current density that is modulated by the structuring features (14) of the working electrode (7) in order to etch material from or deposit material on the front face (11) of the specimen (12).</p>
申请公布号 WO2007099210(A1) 申请公布日期 2007.09.07
申请号 WO2007FR00211 申请日期 2007.02.06
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE;BUTTARD, DENIS 发明人 BUTTARD, DENIS
分类号 C25D5/02;B81C1/00;C25D7/12;C25D17/10;C25F3/14 主分类号 C25D5/02
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