发明名称 METHOD OF MAKING SEGMENTED CONTACTS FOR RADIATION DETECTORS USING DIRECT PHOTOLITHOGRAPHY
摘要 A method is provided for fabricating contacts on semiconductor substrates by direct lithography that results in durable adhesion of the electrodes, increased interpixel resistance and the electrodes which act as a blocking contact, thereby providing for improved energy resolution in a resultant radiation detector.
申请公布号 WO2007100538(A2) 申请公布日期 2007.09.07
申请号 WO2007US04319 申请日期 2007.02.21
申请人 REDLEN TECHNOLOGIES;CHEN, HENRY;ROUPASSOV, SERGUEI;AWADALLA, SALAH 发明人 CHEN, HENRY;ROUPASSOV, SERGUEI;AWADALLA, SALAH
分类号 G01T1/24;H01L27/146 主分类号 G01T1/24
代理机构 代理人
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