METHOD FOR MANUFACTURING Si SINGLE CRYSTAL INGOT BY CZ METHOD

摘要

A Si single crystal having no defective region is stably grown by clearly detecting the type of a defective region or a defect-free region of a Si single crystal grown with a certain pull speed profile and by feeding back such data for the subsequent pulling. At the time of manufacturing the Si single crystal ingot by CZ method, concentration distribution of atomic vacancies, which are on a cross section of the Si single crystal ingot previously grown, is detected by direct observation of atomic vacancies, the obtained concentration distribution is fed back for the subsequent pulling process, and the speed profile of the subsequent pulling is adjusted.