SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device and its fabricating method are provided to improve characteristics of a transistor by removing a gate insulating layer from an edge region of a gate poly. A gate insulating layer(41) is formed on a semiconductor substrate(40), and a polycrystal silicon layer is formed on the gate insulating layer. The polycrystal silicon layer is etched to form a gate poly(44). A wet etching process is performed on the gate insulating layer exposed from the substrate to remove the gate insulating layer. An oxidation process is performed on the substrate to form an oxide layer on a sidewall of the gate poly and the substrate.