发明名称 |
AMPLIFICATION TYPE SOLID-STATE IMAGING DEVICE |
摘要 |
<p>A reset transistor (4) is turned on for a prescribed period and the potential of a signal charge accumulating section (3) is reset, in a status where the drain side potential of an amplifying transistor (5) is reduced and the potential of a read signal line (7) is held at a first potential (Vg), prior to transferring a signal charge from a photodiode (1) to the signal charge accumulating section (3) by a scanning circuit (20). Then, the potential of the signal charge accumulating section (3) is made higher than that just after being reset, by increasing the drain side potential of the amplifying transistor (5) to have the potential of the read signal line (7) to be at a second voltage (Vrst), which is higher than the first voltage (Vg), by the scanning circuit (20). A transfer transistor (2) is turned on, and the signal charge from the photodiode (1) is transferred to the signal charge accumulating section (3).</p> |
申请公布号 |
WO2007099727(A1) |
申请公布日期 |
2007.09.07 |
申请号 |
WO2007JP51434 |
申请日期 |
2007.01.30 |
申请人 |
WATANABE, TAKASHI,;SHARP KABUSHIKI KAISHA;YOSHIMOTO, TAKAHIKO |
发明人 |
WATANABE, TAKASHI,;YOSHIMOTO, TAKAHIKO |
分类号 |
H04N5/374;H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/3745;H04N5/376 |
主分类号 |
H04N5/374 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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