| 摘要 |
PROBLEM TO BE SOLVED: To provide, in a good yield, a composition for forming an insulation film, capable of providing an insulation film for use in a semiconductor device having a low dielectric constant, as well as excellent stress resistance and crack resistance, an insulation film for use in a semiconductor device obtained from the composition for forming an insulation film, and a semiconductor device having high quality and high reliability obtained by using the insulation film for use in a semiconductor device. SOLUTION: The composition for forming an insulation film contains a polymer comprising, as a main chain, a chain substantially formed only of carbon, silicon and hydrogen, and containing nitrogen in a portion other than the main chain. It is preferred that nitrogen is present, as a constituent represented by formula 1, in the polymer. COPYRIGHT: (C)2007,JPO&INPIT
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