| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for substrate processing capable of accelerating the etching rate in the surface gas etching reaction. SOLUTION: This method for substrate processing comprises the first step for carrying out reforming treatment for the surface of a substrate W by irradiation with ultraviolet rays V, the second step for forming an altered layer 45' which is formed by supplying a reactive gas onto the surface of the substrate W subjected to the reforming treatment, and making the surface of the substrate W adsorb the reactive gas; and the third step for etching the surface side of the substrate by carrying out heat treatment to evaporate and remove the altered layer 45'. The apparatus for substrate processing is used in this substrate processing method. COPYRIGHT: (C)2007,JPO&INPIT
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