| 摘要 |
In a semiconductor memory device, comprising: a memory cell including a flip-flop; and a memory cell power supply circuit for supplying a low voltage cell power supply voltage to the memory cell, the memory cell power supply circuit supplies a cell power supply voltage in a first period and a different cell power supply voltage in a second period, a predetermined first power supply voltage in a case where the cell power supply voltage is supplied in a data read cycle and in a case where data is not written to a memory cell to which the cell power supply voltage is supplied in a write cycle, and a second power supply voltage higher than the first power supply voltage in a case where data is written to a memory cell to which the cell power supply voltage is supplied in a write cycle.
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