发明名称 RESIN LAYER FORMING METHOD, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a resin layer forming method that enables planarization of a resin layer while suppressing wear or chipping of a turning tool, a semiconductor device using the resin layer forming method, and a semiconductor device manufacturing method. SOLUTION: The resin layer forming method has a step for forming the resin layer 34 including a mixture for reducing a thermal expansion coefficient on a substrate 10, and for forming the resin layer having the mixture eccentrically located on the substrate side; and a step for planarizing the surface of the resin layer by cutting the surface layer of the resin layer by the turning tool 40. The surface of the resin layer is planarized by cutting the surface layer of such a resin layer after forming the resin layer in which the mixture for reducing the thermal expansion coefficient is eccentrically located on the substrate side. Consequently, it is possible to avoid the turning tool from being seriously worn out or chipped due to the mixture for reducing the thermal expansion coefficient. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007227460(A) 申请公布日期 2007.09.06
申请号 JP20060044128 申请日期 2006.02.21
申请人 FUJITSU LTD 发明人 NAKAGAWA KANAE;TANI MOTOAKI
分类号 H01L21/56;H01L21/304;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L21/56
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