| 摘要 |
PURPOSE:To prevent a deterioration in the withstand voltage of a semiconductor device by forming thickly a wiring polysilicon film and thinly a polysilicon film of the part to become a gate electrode, thereby preventing the production of a distortion of a lower gate oxidized film. CONSTITUTION:A wiring polysilicon film 14A formed on a gate oxidized film 13 is formed thickly such as 4,000-8,000 Angstroms thick on an interelement isolating SiO2 film 12 of the prescribed pattern formed on an Si substrate 11. A polysilicon film 14 between the gate electrodes on an element forming region formed by the film 12 if thinly fomed such as less than 2,000Angstrom . In this manner, a distortion is reduced at the lower gate oxidized film. |
