| 摘要 |
PROBLEM TO BE SOLVED: To achieve a highly-sensitive thermal infrared sensor by improving the heat-insulating properties of a sensor pixel using a bipolar transistor. SOLUTION: The bipolar transistor (402) and a constant current source (401) having temperature dependence are arranged within sensor pixels (102a, 102b). The constant current source is arranged between the collector and base of the bipolar transistor. The wiring part of the collector of the bipolar transistor (402) and one electrode of the constant current source (401) is supported by a common supporting leg, while the emitter wiring of the bipolar transistor is supported by another supporting leg, thereby reducing the number of the supporting legs of a pixel part to two and improving the heat-insulating properties. COPYRIGHT: (C)2007,JPO&INPIT
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