| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat-dissipating board having excellent heat dissipation property and durability such that a crack is not formed. SOLUTION: The heat-dissipating board 1 is formed by joining a silicon nitride substrate 2 and copper plates 41 and 42. The silicon nitride substrate 2 is formed from silicon nitride sintered body. The main component of the copper plates 41 and 42 is copper or copper alloy. The copper plates 41 and 42 are formed on both main surfaces of the silicon nitride substrate 2, via active metal layers 31 and 32. The heat-dissipating board 1 includes bonding layers 51 and 52 between the active metal layers 31 and 32 and the copper plates 41 and 42. The main component of the bonding layers 51 and 52 is copper. Therefore, silicon nitride substrate 2 and the copper plates 41 and 42 can be bonded at a low temperature of about 300°C, as a result of the diffusion effect of the copper or the copper alloy that is the main component of the bonding layers 51 and 52. Warpage is reduced that occurs in the copper layers 41 and 42 during bonding. Therefore, the thickness of the copper layers 41 and 42 can be increased. A heat-dissipating board 1 can be achieved with a high heat-dissipation property. COPYRIGHT: (C)2007,JPO&INPIT
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