| 摘要 |
PROBLEM TO BE SOLVED: To provide a single charge tunnel device which can be used as a nonvolatile memory device, particularly a single electron transistor. SOLUTION: The single charge tunnel made of a ferromagnetic material is controlled not only by applying a gate voltage in an electric mode like the prior art, but also applying a rotationally oriented magnetic field in a magnetic mode. In other words, the chemical potential of the ferromagnetic material is changed by applying the oriented magnetic field and a Coulomb blockade anisotropic magnetoresistance effect is produced. The resultant resistance and change of the device are used for logical 1 and 0 writing signals, and for switching the signals. A nonvolatile memory effect is exerted by the hysteresis of the magnetic mode. COPYRIGHT: (C)2007,JPO&INPIT
|
