发明名称 Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier
摘要 A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.
申请公布号 US7266258(B2) 申请公布日期 2007.09.04
申请号 US20040933652 申请日期 2004.09.02
申请人 INTEL CORPORATION 发明人 LIU ANSHENG;PANICCIA MARIO J.;RONG HAISHENG
分类号 G02F1/025;G02B6/12;G02B6/122;G02B6/26;G02F1/295;G02F1/35;H01S3/30 主分类号 G02F1/025
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