| 摘要 |
<p>A method for manufacturing a flash memory device is provided to prevent swelling generated in a peripheral region and planarize a step region of the second poly silicon layer by etching a capping poly silicon layer with an etch back process before a part of dielectric is etched. A tunnel oxide layer(102), a first poly silicon layer(104), a dielectric(110), and a capping poly silicon layer(112) are sequentially formed on an upper portion of a semiconductor substrate(100). An etch back process is performed to etch the capping poly silicon layer in a predetermined thickness. Predetermined regions of the capping poly silicon layer and the dielectric are removed. A second poly silicon layer(108) is formed on an upper portion of the entire structure. The capping poly silicon layer is formed in 1000 Å to 2000 Å thick. The etched capping poly silicon layer remains in 300 Å to 400 Å thick.</p> |
