| 摘要 |
A method for making a semiconductor device is described. That method comprises adding nitrogen to a silicon dioxide layer to form a nitrided silicon dioxide layer on a substrate. After forming a sacrificial layer on the nitrided silicon dioxide layer, the sacrificial layer is removed to generate a trench. A high-k gate dielectric layer is formed on the nitrided silicon dioxide layer within the trench, and a metal gate electrode is formed on the high-k gate dielectric layer.
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