ORGANIC THIN FILM TRANSISTOR COMPRISING FLUORINE-BASED POLYMER THIN FILM AND METHOD FOR FABRICATING THE SAME

摘要

An organic thin film transistor comprising a fluorine-based polymer thin film, and a method for fabricating the same are provided to form easily an organic semiconductor layer and/or a dielectric film using a wet process. An organic thin film transistor includes a gate electrode(2), a gate dielectric layer(3), an organic semiconductor layer(5), and source/drain electrodes(6,7). In order to fabricate the organic thin film transistor, a fluorine-based polymer composite is coated between the source/drain electrodes and the organic semiconductor layer to form a fluorine-based polymer thin film(4). The fluorine-based polymer thin film is formed by a spin coating, a dip coating, a printing technique, an ink-jet coating or a roll coating. The fluorine-based thin film has a thickness of 10 to 100Å. The organic thin film transistor has a bottom contact type structure or a top gate type structure.