| 摘要 |
A semiconductor device (100) is provided with a BGA substrate (110), a semiconductor chip (101), bumps (106) and an underfill (108) applied around the bumps (106). An interlayer insulating film (104) of the semiconductor chip (101) is composed of a low dielectric constant film. The bumps (106) are composed of a lead-free solder. The underfill (108) is composed of a resin material having an elastic modulus of 150MPa or more but not more than 800MPa, and a linear expansion coefficient of the BGA substrate (110) in a substrate planar direction is less than 14ppm/°C. |
