METHODS OF FORMING PATTERN OF SEMICONDUCTOR DEVICE USING PHOTORESIST PATTERN

摘要

Methods for forming a pattern of a semiconductor device using a photoresist pattern are provided to minimize a defect upon etching a layer under the photoresist pattern by previously eliminating defect components upon forming final photoresist patterns. Photoresist patterns are formed on a substrate(5). A defect pattern(B) is selected out of the photoresist pattern. An electron beam(EB2) is irradiated onto the selected defect pattern to eliminate and reduce the defect pattern, thereby forming a final photoresist pattern(15"). Before the defect pattern is eliminated and reduced, a preliminary electron beam is irradiated onto the substrate to find the defect pattern. The electron beam for eliminating and reducing the defect pattern has energy level higher than that of the preliminary electron beam.