| 摘要 |
<p>A resistive organic memory device and its manufacturing method are provided to reduce switching time and to lower an operational voltage by using an organic active layer which is made of a mixture of a conductive polymer and a metallocene compound. A resistive organic memory device(100) includes an organic active layer(20) between a first electrode(10) and a second electrode(20). The organic active layer is made of a mixture of a conductive polymer and a metallocene compound. The metallocene is represented by a chemical formula of CpMCp'. Cp and Cp' are a substituted or non-substituted cyclopentadienyl or indenyl. The non-substituted Cp and Cp' are substituted by one or more hydrogen valence substituent R or OR. The two substituent R are identical to or different from each other, each of which is independently C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl, or C7-30 heteroarylalkyl. M is Fe, Ru, or Zr.</p> |
