| 发明名称 |
METHOD FOR NITRIDING TUNNEL OXIDE FILM, METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE, NON-VOLATILE MEMORY DEVICE, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM |
| 摘要 |
<p>When nitriding a tunnel oxide film in a non-volatile memory device, a nitrided region is formed in the surface portion of the tunnel oxide film by a plasma processing using a process gas containing a nitrogen gas.</p> |
| 申请公布号 |
KR20070086697(A) |
申请公布日期 |
2007.08.27 |
| 申请号 |
KR20077014617 |
申请日期 |
2007.06.27 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SHIOZAWA TOSHIHIKO;FURUI SHINGO;KOBAYASHI TAKASHI;KITAGAWA JUNICHI |
| 分类号 |
H01L21/318;H01L27/115;H01L29/788 |
主分类号 |
H01L21/318 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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