STRAINED FULLY DEPLETED SILICON ON INSULATOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor substrate (102) is provided having an insulator (104) thereon with a semiconductor layer (106) on the insulator (104). A deep trench isolation (108) is formed, introducing strain to the semiconductor layer (106). A gate dielectric (202) and a gate (204) are formed on the semiconductor layer (106). A spacer (304) is formed around the gate (204), and the semiconductor layer (106) and the insulator (104) are removed outside the spacer (304). Recessed source/drain (402) are formed outside the spacer (304).