SINTERED BODY TARGET FOR TRANSPARENT CONDUCTIVE FILM FABRICATION, TRANSPARENT CONDUCTIVE FILM FABRICATED BY USING THE SAME, AND TRANSPARENT CONDUCTIVE BASE MATERIAL COMPRISING THIS CONDUCTIVE FILM FORMED THEREON

摘要

A sintered body target for transparent conductive film fabrication is chiefl y composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a.beta.-GaInO3 phase and an In2O 3 phase; provides an In2O3 phase (400) / .beta.-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45 % or less; and has a density of 5.8 g / cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.