| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrostatic chuck which can maintain a smooth surface even after it is exposed in plasma, can suppress contamination due to particles on an object to be sucked such as a silicon wafer, is excellent in sucking and separating characteristics of the object to be sucked, and can be easily manufactured using low-temperature baking. <P>SOLUTION: The electrostatic chuck includes a dielectric for an electrostatic chuck having a structure in which 99.4 wt.% or more alumina and 0.2-0.6 wt.% titanium oxide are contained, a volume resistivity is 10<SP>8</SP>-10<SP>11</SP>Ω cm at a room temperature, and the titanium oxide is segregated on the boundaries of aluminum particles. <P>COPYRIGHT: (C)2007,JPO&INPIT |
