| 摘要 |
PROBLEM TO BE SOLVED: To present the constitution of a boron-containing III-V compound semiconductor layer to be stably given a light-emitting layer composed of a gallium-containing III-V compound semiconductor layer of a good quality on a single crystal substrate of silicon, etc. SOLUTION: A laminated structure for a light-emitting is provided with a single crystal substrate, a buffer layer laminated on the substrate, a barrier layer laminated on the buffer layer and composed of a III-V compound semiconductor containing boron, and the light-emitting layer composed of the gallium- containing III-V compound semiconductor layer. The barrier layer is composed of a composition inclination layer which has a boron composition ratio lattice- matched with the buffer layer on a surface facing the buffer layer, which has a boron composition ratio lattice-matched with the light-emitting layer and which is composed of the boron-containing III-V compound semiconductor obtained by inclining the boron composition ratio in the increasing direction of a layer thickness. |
