| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which the deterioration of performance resulting from a power supply voltage drop (IR drop) in the semiconductor device can be suppressed easily. SOLUTION: When a semiconductor device 100 comprising a semiconductor substrate 10, a circuit element 20 formed on the semiconductor substrate, and a multilayer wiring portion 50 having a large number of wiring formed across a plurality of layers and constituting an integrated circuit together with the circuit element is manufactured on the semiconductor substrate, thermoelectric generating portions 60A-60C are formed in the multilayer wiring portion and individual thermoelectric generating portions are connected with predetermined wiring in the multilayer wiring portion. COPYRIGHT: (C)2007,JPO&INPIT |
